Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Id – Continuous Drain Current : 49 A
- Vds – Drain-Source Breakdown Voltage : 55 V
- Rds – Drain-Source Resistance : 23 mOhms
- Transistor Polarity : N-Channel
- Vgs – Gate-Source Breakdown Voltage : 20 V
- Qg – Gate Charge : 42 nC
- Pd – Dissipation : 83 W
