Description
These IRF520N N-Channel HEXFET Power MOSFETs are ideal for fast-switching, high-efficiency applications.
Designed using fifth-generation processing, they deliver extremely low on resistance and excellent reliability in a compact TO-220 through-hole package.
With rugged construction and high speed switching performance, they are perfect for power control, DC motors, LED drivers, switching regulators, and more.
- Type: N-Channel HEXFET Power MOSFET
- Model: IRF520N
- Package: TO-220 (Through Hole)
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 9.2A @ 25°C
- Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
- Rds(on): 0.27Ω max @ Vgs = 10V
- Power Dissipation: 40W
- Total Gate Charge (Qg): 67nC
- Rise Time / Fall Time: ~30ns / ~20ns
- Technology: Fifth-Generation HEXFET
What’s Included:
- 5 x IRF520N N-Channel HEXFET Power MOSFETs (TO-220)
Great For:
- Fast-switching power circuits
- DC motor control
- LED dimmers and drivers
- Switching power supplies (SMPS)
- Microcontroller-based projects (use logic-level gate driver)
Usage Tips:
- Ensure proper heatsinking when handling high current
- Drive gate with 10V for optimal switching performance
- Compatible with many MOSFET driver ICs and PWM controllers
