Description
The FQP50N06 is a robust, high-performance N-Channel enhancement mode power MOSFET designed for efficiency and reliability in demanding power switching applications.
Built using advanced planar stripe and DMOS technology, these transistors offer low on-state resistance (Rds(on)) and excellent high-speed switching characteristics.
They’re ideal for use in DC motor drivers, audio amplifiers, switching regulators, and power supply circuits.
Packaged in a standard TO-220 case for easy mounting and heat dissipation, these MOSFETs deliver high current capability and excellent thermal performance in a compact, through-hole form.
- Model: FQP50N06 (also known as P50N06)
- Type: N-Channel Enhancement Mode Power MOSFET
- Package: TO-220 (Through-Hole)
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V
- Rds(on): < 0.022Ω @ Vgs = 10V
- Power Dissipation: 110W (max)
- Total Gate Charge: ~67nC (typical)
- Switching Speed: Fast switching, suitable for high-frequency applications
- Operating Temperature Range: -55°C to +175°C
- Mounting: TO-220, heatsink compatible
What’s Included:
- 5x FQP50N06 N-Channel MOSFETs (TO-220 Package)
Great For:
- High-Efficiency Power Switching
- DC Motor Control & PWM Drivers
- Switched Mode Power Supplies (SMPS)
- Audio Amplifier Output Stages
- Variable Power Controllers
- Arduino, ESP32 & Raspberry Pi Power Projects
- Robotics & Automation Systems
Usage Tips:
- Use with appropriate gate resistor and flyback diode when switching inductive loads
- Ensure good heat dissipation – use heatsink or thermal pad as needed
- Logic-level gate drive compatible with many microcontrollers
- Suitable for high-current, high-frequency circuits
